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| MITSUBISHI SEMICONDUCTOR TRIAC BCR3PM LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR3PM OUTLINE DRAWING 10.5 MAX 5.2 Dimensions in mm 2.8 17 5.0 1.2 TYPE NAME VOLTAGE CLASS 3.20.2 13.5 MIN 3.6 1.3 MAX 0.8 2.54 2.54 8.5 0.5 2.6 * * * * * IT (RMS) ........................................................................ 3A VDRM ..............................................................400V/600V IFGT !, IRGT !, IRGT # ......................... 30mA (10mA) V5 Viso ........................................................................ 1500V UL Recognized: File No. E80276 123 2 Measurement point of case temperature 1 1 T1 TERMINAL 2 T2 TERMINAL 3 3 GATE TERMINAL TO-220F APPLICATION Contactless AC switches, light dimmer, electric blankets, control of household equipment such as electric fan, solenoid drivers, small motor control, other general purpose control applications MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 500 12 600 720 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg -- Viso Parameter RMS on-state current Surge on-state current I2t for fusing Conditions Commercial frequency, sine full wave 360 conduction, Tc=107C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 4.5 Ratings 3.0 30 3.7 3 0.3 6 0.5 -40 ~ +125 -40 ~ +125 Unit A A A2s W W V A C C g V Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Isolation voltage Typical value Ta=25C, AC 1 minute, T1 * T2 * G terminal to case 2.0 1500 V1. Gate open. Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR3PM LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) (dv/dt)c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage Gate trigger current V2 Gate trigger voltage V2 Parameter Repetitive peak off-state current On-state voltage ! @ # ! @ # Tj=125C, VD=1/2VDRM Junction to case V4 Tj=25C, VD=6V, RL=6, RG=330 Tj=25C, VD=6V, RL=6, RG=330 Test conditions Tj=125C, VDRM applied Tc=25C, ITM=4.5A, Instantaneous measurement Limits Min. -- -- -- -- -- -- -- -- 0.2 -- V3 Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 1.5 1.5 1.5 1.5 30 V5 30 V5 30 V5 -- 4.5 -- Unit mA V V V V mA mA mA V C/ W V/s V2. Measurement using the gate trigger characteristics measurement circuit. V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. V4. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. V5. High sensitivity (IGT10mA) is also available. (dv/dt) c Min. Unit Test conditions Voltage class VDRM (V) Commutating voltage and current waveforms (inductive load) 8 400 1. Junction temperature Tj=125C 5 V/s 2. Rate of decay of on-state commutating current (di/dt)c=-1.5A/ms 3. Peak off-state voltage VD=400V SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c TIME TIME TIME VD 12 600 PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS SURGE ON-STATE CURRENT (A) RATED SURGE ON-STATE CURRENT 40 ON-STATE CURRENT (A) 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 TC = 25C 35 30 25 20 15 10 5 0 100 2 3 4 5 7 101 2 3 4 5 7 102 10-1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR3PM LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE GATE CHARACTERISTICS 100 (%) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 TYPICAL EXAMPLE IRGT III GATE VOLTAGE (V) 101 7 5 3 2 100 7 5 3 2 PG(AV) = 0.3W VGT IGM = 0.5A GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C) 102 7 5 3 2 PGM = 3W IRGT I 102 IFGT I, IRGT I 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) IFGT I, IRGT III VGD = 0.2V 10-1 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE CURRENT (mA) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) GATE TRIGGER VOLTAGE (Tj = tC) GATE TRIGGER VOLTAGE (Tj = 25C) 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE TRANSIENT THERMAL IMPEDANCE (C/W) 102 2 3 5 7 103 2 3 5 7 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) MAXIMUM ON-STATE POWER DISSIPATION ON-STATE POWER DISSIPATION (W) ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 130 120 CASE TEMPERATURE (C) 5.0 4.5 4.0 360 3.5 CONDUCTION 3.0 RESISTIVE, INDUCTIVE 2.5 LOADS 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS ON-STATE CURRENT (A) 110 100 CURVES APPLY REGARDLESS 90 OF CONDUCTION ANGLE 80 70 60 360 CONDUCTION 50 RESISTIVE, 40 INDUCTIVE LOADS 30 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR3PM LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE AMBIENT TEMPERATURE (C) 80 60 40 20 0 0 1 2 NATURAL CONVECTION CURVES APPLY REGARDLESS OF CONDUCTION ANGLE RESISTIVE, INDUCTIVE LOADS 8 3 4 5 6 7 AMBIENT TEMPERATURE (C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED 140 ALUMINUM AND GREASED 120 120 t2.3 120 100 100 t2.3 100 60 60 t2.3 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 80 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) 100 (%) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 TYPICAL EXAMPLE 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) 103 7 5 4 3 2 102 7 5 4 3 2 HOLDING CURRENT VS. JUNCTION TEMPERATURE 100 (%) REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C) TYPICAL EXAMPLE HOLDING CURRENT (Tj = tC) HOLDING CURRENT (Tj = 25C) 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) LACHING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (C) 100 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) T2 , G TYPICAL - T2 , G- EXAMPLE + + BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C) ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, LACHING CURRENT (mA) DISTRIBUTION + T2 , G- TYPICAL EXAMPLE Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR3PM LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE 100 (%) 160 140 TYPICAL EXAMPLE Tj = 125C BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s ) 120 100 80 60 40 20 III QUADRANT CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE COMMUTATION CHARACTERISTICS 102 VOLTAGE WAVEFORM TYPICAL 7 t EXAMPLE 5 (dv/dt)C VD Tj = 125C 4 IT = 4A 3 CURRENT WAVEFORM (di/dt)C = 500s IT 2 VD = 200V t f = 3Hz 101 7 I QUADRANT 5 4 III QUADRANT 3 MINIMUM 2 CHARAC100 0 10 TERISTICS VALUE I QUADRANT 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 4 5 7 101 2 3 4 5 7 102 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 6 100 (%) TYPICAL EXAMPLE IRGT III IRGT I IFGT I 6V V A RG 6V V A RG GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) TEST PROCEDURE 1 6 TEST PROCEDURE 2 6V V A RG GATE CURRENT PULSE WIDTH (s) TEST PROCEDURE 3 Feb.1999 |
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